PBHV8115T-QR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
PBHV8115T-Q/SOT23/TO-236AB
PBHV8115T-Q/SOT23/TO-236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 150 V 1 A 30 MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 150 V 1 A 30 MHz 300 mW surface-mounted TO-236AB
Description
Description
The PBHV8115T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage (VCEO) of 150 V, a collector current (IC) of 1 A, and a transition frequency (fT) of 30 MHz. This device is suitable for automotive applications and offers low collector-emitter saturation voltage (VCEsat) and high current gain.
The PBHV8115T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage (VCEO) of 150 V, a collector current (IC) of 1 A, and a transition frequency (fT) of 30 MHz. This device is suitable for automotive applications and offers low collector-emitter saturation voltage (VCEsat) and high current gain.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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