PBHV8115T-QR
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
PBHV8115T-Q/SOT23/TO-236AB
PBHV8115T-Q/SOT23/TO-236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 150 V 1 A 30 MHz 300 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor NPN 150 V 1 A 30 MHz 300 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBHV8115T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage (VCEO) of 150 V, a collector current (IC) of 1 A, and a transition frequency (fT) of 30 MHz. This device is suitable for automotive applications and offers low collector-emitter saturation voltage (VCEsat) and high current gain.
The PBHV8115T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage (VCEO) of 150 V, a collector current (IC) of 1 A, and a transition frequency (fT) of 30 MHz. This device is suitable for automotive applications and offers low collector-emitter saturation voltage (VCEsat) and high current gain.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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