NP50P03YDG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 50A 8HSON
MOSFET P-CH 30V 50A 8HSON
Detailed specification
Detailed specification
P-Channel 30 V 50A (Tc) 1W (Ta), 102W (Tc) surface-mounted 8-HSON
P-Channel 30 V 50A (Tc) 1W (Ta), 102W (Tc) surface-mounted 8-HSON
Description
Description
The NP50P03YDG is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -30V and a continuous Drain Current (ID) of 50A. It has a low on-state resistance of RDS(on) = 8.4 mΩ (VGS = -10V, ID = -25A) and a total power dissipation of 102W at Tc = 25°C. This device is suitable for automotive applications and is housed in an 8-pin surface mount HSON package.
The NP50P03YDG is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -30V and a continuous Drain Current (ID) of 50A. It has a low on-state resistance of RDS(on) = 8.4 mΩ (VGS = -10V, ID = -25A) and a total power dissipation of 102W at Tc = 25°C. This device is suitable for automotive applications and is housed in an 8-pin surface mount HSON package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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