NP50P03YDG-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 50A 8HSON
MOSFET P-CH 30V 50A 8HSON
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 50A (Tc) 1W (Ta), 102W (Tc) ytmonterad 8-HSON
P-Kanal 30 V 50A (Tc) 1W (Ta), 102W (Tc) ytmonterad 8-HSON
Beskrivning (eng)
Beskrivning (eng)
The NP50P03YDG is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -30V and a continuous Drain Current (ID) of 50A. It has a low on-state resistance of RDS(on) = 8.4 mΩ (VGS = -10V, ID = -25A) and a total power dissipation of 102W at Tc = 25°C. This device is suitable for automotive applications and is housed in an 8-pin surface mount HSON package.
The NP50P03YDG is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -30V and a continuous Drain Current (ID) of 50A. It has a low on-state resistance of RDS(on) = 8.4 mΩ (VGS = -10V, ID = -25A) and a total power dissipation of 102W at Tc = 25°C. This device is suitable for automotive applications and is housed in an 8-pin surface mount HSON package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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