NP35N04YUG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 40V 35A 8HSON
MOSFET N-CH 40V 35A 8HSON
Detailed specification
Detailed specification
N-Channel 40 V 35A (Tc) 1W (Ta), 77W (Tc) surface-mounted 8-HSON
N-Channel 40 V 35A (Tc) 1W (Ta), 77W (Tc) surface-mounted 8-HSON
Description
Description
The NP35N04YUG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 35A. It has a low on-state resistance (RDS(on)) of 10 mΩ and a total power dissipation of 77W at a case temperature of 25°C. This device is suitable for automotive applications and is housed in a compact 8-pin HSON package.
The NP35N04YUG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 35A. It has a low on-state resistance (RDS(on)) of 10 mΩ and a total power dissipation of 77W at a case temperature of 25°C. This device is suitable for automotive applications and is housed in a compact 8-pin HSON package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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