NP35N04YUG-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 40V 35A 8HSON
MOSFET N-CH 40V 35A 8HSON
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 40 V 35A (Tc) 1W (Ta), 77W (Tc) ytmonterad 8-HSON
N-Kanal 40 V 35A (Tc) 1W (Ta), 77W (Tc) ytmonterad 8-HSON
Beskrivning (eng)
Beskrivning (eng)
The NP35N04YUG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 35A. It has a low on-state resistance (RDS(on)) of 10 mΩ and a total power dissipation of 77W at a case temperature of 25°C. This device is suitable for automotive applications and is housed in a compact 8-pin HSON package.
The NP35N04YUG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 35A. It has a low on-state resistance (RDS(on)) of 10 mΩ and a total power dissipation of 77W at a case temperature of 25°C. This device is suitable for automotive applications and is housed in a compact 8-pin HSON package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Gustaf eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K