N0601N-ZK-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 100A TO263
MOSFET N-CH 60V 100A TO263
Detailed specification
Detailed specification
N-Channel 60 V 100A (Ta) 1.5W (Ta), 156W (Tc) surface-mounted TO-263
N-Channel 60 V 100A (Ta) 1.5W (Ta), 156W (Tc) surface-mounted TO-263
Description
Description
The N0601N-ZK-E1-AY is an N-channel MOSFET designed for high current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of ±100A. The device has a low on-state resistance of RDS(on) = 4.2 mΩ at VGS = 10V and ID = 50A, making it suitable for efficient power management in various electronic systems. The TO-263 package allows for surface mounting, enhancing thermal performance with a total power dissipation of 156W at TC = 25°C.
The N0601N-ZK-E1-AY is an N-channel MOSFET designed for high current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of ±100A. The device has a low on-state resistance of RDS(on) = 4.2 mΩ at VGS = 10V and ID = 50A, making it suitable for efficient power management in various electronic systems. The TO-263 package allows for surface mounting, enhancing thermal performance with a total power dissipation of 156W at TC = 25°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.C