N0601N-ZK-E1-AY
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 100A TO263
MOSFET N-CH 60V 100A TO263
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 100A (Ta) 1,5W (Ta), 156W (Tc) ytmonterad TO-263
N-Kanal 60 V 100A (Ta) 1,5W (Ta), 156W (Tc) ytmonterad TO-263
Beskrivning (eng)
Beskrivning (eng)
The N0601N-ZK-E1-AY is an N-channel MOSFET designed for high current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of ±100A. The device has a low on-state resistance of RDS(on) = 4.2 mΩ at VGS = 10V and ID = 50A, making it suitable for efficient power management in various electronic systems. The TO-263 package allows for surface mounting, enhancing thermal performance with a total power dissipation of 156W at TC = 25°C.
The N0601N-ZK-E1-AY is an N-channel MOSFET designed for high current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of ±100A. The device has a low on-state resistance of RDS(on) = 4.2 mΩ at VGS = 10V and ID = 50A, making it suitable for efficient power management in various electronic systems. The TO-263 package allows for surface mounting, enhancing thermal performance with a total power dissipation of 156W at TC = 25°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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