MMBT5401-7-F
Manufacturer
DIODES INC
Data sheet
Data sheet
Specification
Specification
TRANS PNP 150V 0.6A SOT23-3
TRANS PNP 150V 0.6A SOT23-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 300 mW surface-mounted SOT-23-3
Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 300 mW surface-mounted SOT-23-3
Description
Description
The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) designed for high-voltage applications, featuring a collector-emitter voltage of 150V and a collector current of 600mA. It operates at a frequency of up to 300MHz and has a power dissipation of 310mW. This surface-mounted device is ideal for low power amplification and switching applications.
The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) designed for high-voltage applications, featuring a collector-emitter voltage of 150V and a collector current of 600mA. It operates at a frequency of up to 300MHz and has a power dissipation of 310mW. This surface-mounted device is ideal for low power amplification and switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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