MMBT5401-7-F
Tillverkare
DIODES INC
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 150V 0.6A SOT23-3
TRANS PNP 150V 0.6A SOT23-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 150 V 600 mA 300MHz 300 mW ytmonterad SOT-23-3
Bipolär (BJT) Transistor PNP 150 V 600 mA 300MHz 300 mW ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) designed for high-voltage applications, featuring a collector-emitter voltage of 150V and a collector current of 600mA. It operates at a frequency of up to 300MHz and has a power dissipation of 310mW. This surface-mounted device is ideal for low power amplification and switching applications.
The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) designed for high-voltage applications, featuring a collector-emitter voltage of 150V and a collector current of 600mA. It operates at a frequency of up to 300MHz and has a power dissipation of 310mW. This surface-mounted device is ideal for low power amplification and switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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