MMBT2907A
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT-23 60V 600MA
BJT SOT-23 60V 600MA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Description
Description
The MMBT2907A is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of 60 V and a collector current (IC) of 600 mA. It features a power dissipation of 250 mW and a gain-bandwidth product of 200 MHz. The device operates with a maximum junction temperature of 150°C and is suitable for general-purpose applications in signal processing, switching, and amplification.
The MMBT2907A is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of 60 V and a collector current (IC) of 600 mA. It features a power dissipation of 250 mW and a gain-bandwidth product of 200 MHz. The device operates with a maximum junction temperature of 150°C and is suitable for general-purpose applications in signal processing, switching, and amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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