MMBT2907A
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT-23 60V 600MA
BJT SOT-23 60V 600MA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 250 mW surface-mounted SOT-23-3 (TO-236)
Description
Description
The MMBT2907A is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of 60 V and a collector current (IC) of 600 mA. It features a power dissipation of 250 mW and a gain-bandwidth product of 200 MHz. The device operates with a maximum junction temperature of 150°C and is suitable for general-purpose applications in signal processing, switching, and amplification.
The MMBT2907A is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, rated for a collector-emitter voltage (VCEO) of 60 V and a collector current (IC) of 600 mA. It features a power dissipation of 250 mW and a gain-bandwidth product of 200 MHz. The device operates with a maximum junction temperature of 150°C and is suitable for general-purpose applications in signal processing, switching, and amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Other manufacturers
MMBT2907A is also available from the following manufacturersContact sales
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