MMBT2907A
Manufacturer
ANBON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
GENERAL PURPOSE PNP TRANSISTOR
GENERAL PURPOSE PNP TRANSISTOR
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 350 mW surface-mounted SOT-23-3L
Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 350 mW surface-mounted SOT-23-3L
Description
Description
The MMBT2907A is a general-purpose PNP bipolar junction transistor (BJT) designed for a variety of applications. It features a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 800 mA, making it suitable for medium power switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 350 mW, this surface-mounted device is housed in a compact SOT-23-3L package, ensuring efficient thermal management and space-saving design in electronic circuits.
The MMBT2907A is a general-purpose PNP bipolar junction transistor (BJT) designed for a variety of applications. It features a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 800 mA, making it suitable for medium power switching and amplification tasks. With a transition frequency of 200 MHz and a power dissipation of 350 mW, this surface-mounted device is housed in a compact SOT-23-3L package, ensuring efficient thermal management and space-saving design in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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