MJD45H11AJ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 80V 8A DPAK
TRANS PNP 80V 8A DPAK
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 80 V 8 A 80MHz 1.75 W surface-mounted DPAK
Bipolar (BJT) Transistor PNP 80 V 8 A 80MHz 1.75 W surface-mounted DPAK
Description
Description
The MJD45H11AJ is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 80 V, a collector current rating of 8 A, and a power dissipation capability of 1.75 W. This device operates at a frequency of up to 80 MHz, making it suitable for various power management applications.
The MJD45H11AJ is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 80 V, a collector current rating of 8 A, and a power dissipation capability of 1.75 W. This device operates at a frequency of up to 80 MHz, making it suitable for various power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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