MJD45H11AJ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 80V 8A DPAK
TRANS PNP 80V 8A DPAK
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 80 V 8 A 80MHz 1.75 W ytmonterad DPAK
Bipolar (BJT) Transistor PNP 80 V 8 A 80MHz 1.75 W ytmonterad DPAK
Beskrivning (eng)
Beskrivning (eng)
The MJD45H11AJ is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 80 V, a collector current rating of 8 A, and a power dissipation capability of 1.75 W. This device operates at a frequency of up to 80 MHz, making it suitable for various power management applications.
The MJD45H11AJ is a high power PNP bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 80 V, a collector current rating of 8 A, and a power dissipation capability of 1.75 W. This device operates at a frequency of up to 80 MHz, making it suitable for various power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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