IRF630
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 9A TO220AB
MOSFET N-CH 200V 9A TO220AB
Detailed specification
Detailed specification
N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220
N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220
Description
Description
The IRF630 is an N-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 200 V, a continuous drain current (ID) of 9 A, and a maximum power dissipation of 120 W. With a low on-state resistance (RDS(on)) of 0.40 Ω and minimized gate charge, it is ideal for use in isolated DC-DC converters.
The IRF630 is an N-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 200 V, a continuous drain current (ID) of 9 A, and a maximum power dissipation of 120 W. With a low on-state resistance (RDS(on)) of 0.40 Ω and minimized gate charge, it is ideal for use in isolated DC-DC converters.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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