IRF630
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 9A TO220AB
MOSFET N-CH 200V 9A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 9A (Tc) 75W (Tc) Genomgående hål TO-220
N-Kanal 200 V 9A (Tc) 75W (Tc) Genomgående hål TO-220
Beskrivning (eng)
Beskrivning (eng)
The IRF630 is an N-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 200 V, a continuous drain current (ID) of 9 A, and a maximum power dissipation of 120 W. With a low on-state resistance (RDS(on)) of 0.40 Ω and minimized gate charge, it is ideal for use in isolated DC-DC converters.
The IRF630 is an N-Channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 200 V, a continuous drain current (ID) of 9 A, and a maximum power dissipation of 120 W. With a low on-state resistance (RDS(on)) of 0.40 Ω and minimized gate charge, it is ideal for use in isolated DC-DC converters.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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