H11D1M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The H11D1M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a collector-emitter breakdown voltage (BVCEO) of 300 V, making it suitable for various applications in power supply regulation and industrial control systems.
The H11D1M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a collector-emitter breakdown voltage (BVCEO) of 300 V, making it suitable for various applications in power supply regulation and industrial control systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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