H11AA1M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The H11AA1M is an optoisolator featuring a transistor output with a base connection, capable of withstanding 4170 Vrms isolation voltage. It consists of two gallium-arsenide infrared emitting diodes driving a single silicon phototransistor. This device is housed in a 6-pin DIP package and is designed for applications requiring electrical isolation and signal transmission.
The H11AA1M is an optoisolator featuring a transistor output with a base connection, capable of withstanding 4170 Vrms isolation voltage. It consists of two gallium-arsenide infrared emitting diodes driving a single silicon phototransistor. This device is housed in a 6-pin DIP package and is designed for applications requiring electrical isolation and signal transmission.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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