H11AA1M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The H11AA1M is an optoisolator featuring a transistor output with a base connection, capable of withstanding 4170 Vrms isolation voltage. It consists of two gallium-arsenide infrared emitting diodes driving a single silicon phototransistor. This device is housed in a 6-pin DIP package and is designed for applications requiring electrical isolation and signal transmission.
The H11AA1M is an optoisolator featuring a transistor output with a base connection, capable of withstanding 4170 Vrms isolation voltage. It consists of two gallium-arsenide infrared emitting diodes driving a single silicon phototransistor. This device is housed in a 6-pin DIP package and is designed for applications requiring electrical isolation and signal transmission.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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