GT50JR22(STA1,E,S)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
PB-F IGBT / TRANSISTOR TO-3PN(OS
PB-F IGBT / TRANSISTOR TO-3PN(OS
Detailed specification
Detailed specification
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Description
Description
The GT50JR22 is a 600 V, 50 A, 230 W N-Channel IGBT designed for current-resonant inverter switching applications. It features a low saturation voltage of VCE(sat) = 1.55 V (typ.) and high-speed switching capabilities with tf = 0.05 µs (typ.). The device is housed in a TO-3P(N) package and supports a maximum junction temperature of 175°C.
The GT50JR22 is a 600 V, 50 A, 230 W N-Channel IGBT designed for current-resonant inverter switching applications. It features a low saturation voltage of VCE(sat) = 1.55 V (typ.) and high-speed switching capabilities with tf = 0.05 µs (typ.). The device is housed in a TO-3P(N) package and supports a maximum junction temperature of 175°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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