GT50JR22(STA1,E,S)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
PB-F IGBT / TRANSISTOR TO-3PN(OS
PB-F IGBT / TRANSISTOR TO-3PN(OS
Detaljerad specifikation
Detaljerad specifikation
IGBT 600 V 50 A 230 W Genomgående hål TO-3P(N)
IGBT 600 V 50 A 230 W Genomgående hål TO-3P(N)
Beskrivning (eng)
Beskrivning (eng)
The GT50JR22 is a 600 V, 50 A, 230 W N-Channel IGBT designed for current-resonant inverter switching applications. It features a low saturation voltage of VCE(sat) = 1.55 V (typ.) and high-speed switching capabilities with tf = 0.05 µs (typ.). The device is housed in a TO-3P(N) package and supports a maximum junction temperature of 175°C.
The GT50JR22 is a 600 V, 50 A, 230 W N-Channel IGBT designed for current-resonant inverter switching applications. It features a low saturation voltage of VCE(sat) = 1.55 V (typ.) and high-speed switching capabilities with tf = 0.05 µs (typ.). The device is housed in a TO-3P(N) package and supports a maximum junction temperature of 175°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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