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FDN352AP

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
FDN352AP is designed for notebook computer power management and is well-suited for low voltage and battery-powered applications where low in-line power loss is critical. Its high performance trench technology ensures efficient operation in compact electronic designs.
Specification
Specification
MOSFET P-CH 30V 1.3A SOT23
MOSFET P-CH 30V 1.3A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN352AP is a P-Channel MOSFET with a maximum Drain-Source Voltage of -30V and a continuous Drain Current of -1.3A. It features a low RDS(ON) of 180 mΩ at VGS = -10V, making it suitable for low voltage and battery-powered applications. The device is housed in a SOT-23 package, providing high power handling capability.
The FDN352AP is a P-Channel MOSFET with a maximum Drain-Source Voltage of -30V and a continuous Drain Current of -1.3A. It features a low RDS(ON) of 180 mΩ at VGS = -10V, making it suitable for low voltage and battery-powered applications. The device is housed in a SOT-23 package, providing high power handling capability.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
FDN352AP is also available from the following manufacturers
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