FDN352AP
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
SMALL SIGNAL FIELD-EFFECT TRANSI
SMALL SIGNAL FIELD-EFFECT TRANSI
Detailed specification
Detailed specification
P-Channel 30 V 1.3A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 30 V 1.3A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN352AP is a P-Channel small signal field-effect transistor (FET) designed for low voltage applications. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 1.3 A at ambient temperature (Ta). The device has a power dissipation capability of 500 mW (Ta) and is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. This FET is ideal for use in switching and amplification applications in consumer electronics and automotive circuits.
The FDN352AP is a P-Channel small signal field-effect transistor (FET) designed for low voltage applications. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 1.3 A at ambient temperature (Ta). The device has a power dissipation capability of 500 mW (Ta) and is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. This FET is ideal for use in switching and amplification applications in consumer electronics and automotive circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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