FDN352AP
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 1.3A SUPERSOT3
MOSFET P-CH 30V 1.3A SUPERSOT3
Detailed specification
Detailed specification
P-Channel 30 V 1.3A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 30 V 1.3A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN352AP is a P-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of -30V and a continuous drain current of -1.3A. With a low on-state resistance (RDS(on)) of 180 mΩ at VGS = -10V, it ensures minimal power loss in a compact SOT-23-3 package, making it ideal for efficient power management in portable devices.
The FDN352AP is a P-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of -30V and a continuous drain current of -1.3A. With a low on-state resistance (RDS(on)) of 180 mΩ at VGS = -10V, it ensures minimal power loss in a compact SOT-23-3 package, making it ideal for efficient power management in portable devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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