FDN308P
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 20V 1.5A SOT23
MOSFET P-CH 20V 1.5A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN308P is a P-Channel MOSFET designed for power management applications, featuring a maximum Drain-Source Voltage (VDSS) of -20V and continuous Drain Current (ID) of -1.5A. It has a low on-state resistance (RDS(on)) of 100 mΩ at VGS = -4.5V, making it suitable for load switching and battery protection. The device operates within a temperature range of -55°C to +150°C.
The FDN308P is a P-Channel MOSFET designed for power management applications, featuring a maximum Drain-Source Voltage (VDSS) of -20V and continuous Drain Current (ID) of -1.5A. It has a low on-state resistance (RDS(on)) of 100 mΩ at VGS = -4.5V, making it suitable for load switching and battery protection. The device operates within a temperature range of -55°C to +150°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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