FDN308P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 20V 1.5A SOT23
MOSFET P-CH 20V 1.5A SOT23
Detaljerad specifikation
Detaljerad specifikation
-
-
Beskrivning (eng)
Beskrivning (eng)
The FDN308P is a P-Channel MOSFET designed for power management applications, featuring a maximum Drain-Source Voltage (VDSS) of -20V and continuous Drain Current (ID) of -1.5A. It has a low on-state resistance (RDS(on)) of 100 mΩ at VGS = -4.5V, making it suitable for load switching and battery protection. The device operates within a temperature range of -55°C to +150°C.
The FDN308P is a P-Channel MOSFET designed for power management applications, featuring a maximum Drain-Source Voltage (VDSS) of -20V and continuous Drain Current (ID) of -1.5A. It has a low on-state resistance (RDS(on)) of 100 mΩ at VGS = -4.5V, making it suitable for load switching and battery protection. The device operates within a temperature range of -55°C to +150°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Gabriella eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K