BSS123
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Specification
Specification
MOSFET N-CH 100V 170MA SOT23
MOSFET N-CH 100V 170MA SOT23
Detailed specification
Detailed specification
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Description
Description
The BSS123 is an N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 170mA, making it suitable for low to medium power applications. Packaged in a compact SOT23 form factor, this MOSFET is ideal for space-constrained designs. Its low RDS(on) ensures minimal power loss during operation, enhancing overall circuit efficiency. The BSS123 is commonly used in power management, signal switching, and other electronic control applications.
The BSS123 is an N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 170mA, making it suitable for low to medium power applications. Packaged in a compact SOT23 form factor, this MOSFET is ideal for space-constrained designs. Its low RDS(on) ensures minimal power loss during operation, enhancing overall circuit efficiency. The BSS123 is commonly used in power management, signal switching, and other electronic control applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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