BSS123
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 170MA SOT23-3
MOSFET N-CH 100V 170MA SOT23-3
Detailed specification
Detailed specification
N-Channel 100 V 200mA 350mW (Ta) surface-mounted SOT-23-3
N-Channel 100 V 200mA 350mW (Ta) surface-mounted SOT-23-3
Description
Description
The BSS123 is an N-Channel enhancement mode MOSFET designed for low voltage, low current applications. It features a maximum drain-source voltage of 100 V, continuous drain current of 170 mA, and a power dissipation of 350 mW. The device is housed in a compact SOT-23-3 package, providing excellent switching performance with low on-state resistance (RDS(on)) of 6 Ω at VGS = 10 V.
The BSS123 is an N-Channel enhancement mode MOSFET designed for low voltage, low current applications. It features a maximum drain-source voltage of 100 V, continuous drain current of 170 mA, and a power dissipation of 350 mW. The device is housed in a compact SOT-23-3 package, providing excellent switching performance with low on-state resistance (RDS(on)) of 6 Ω at VGS = 10 V.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
BSS123 is also available from the following manufacturersContact sales
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