BSS123
Manufacturer
ANBON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
N-CHANNEL ENHANCEMENT MODE MOSFE
N-CHANNEL ENHANCEMENT MODE MOSFE
Detailed specification
Detailed specification
N-Channel 100 V 200mA (Ta) 350mW (Ta) surface-mounted SOT-23
N-Channel 100 V 200mA (Ta) 350mW (Ta) surface-mounted SOT-23
Description
Description
The BSS123 is an N-Channel Enhancement Mode MOSFET designed for applications requiring a maximum Drain-Source Voltage of 100 V and continuous Drain Current of 0.2 A. It features a low on-state resistance of 5.0 Ω at VGS = 10 V and is housed in a SOT-23 package, making it suitable for surface-mounted applications.
The BSS123 is an N-Channel Enhancement Mode MOSFET designed for applications requiring a maximum Drain-Source Voltage of 100 V and continuous Drain Current of 0.2 A. It features a low on-state resistance of 5.0 Ω at VGS = 10 V and is housed in a SOT-23 package, making it suitable for surface-mounted applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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