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BSS123

Manufacturer

ANBON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
BSS123 is ideal for small servo motor controls, power MOSFET gate drivers, and various switching applications in industrial and consumer electronics. Its advanced trench process technology ensures efficient performance in voltage-controlled small signal switching.
Specification
Specification
N-CHANNEL ENHANCEMENT MODE MOSFE
N-CHANNEL ENHANCEMENT MODE MOSFE
Detailed specification
Detailed specification
N-Channel 100 V 200mA (Ta) 350mW (Ta) surface-mounted SOT-23
N-Channel 100 V 200mA (Ta) 350mW (Ta) surface-mounted SOT-23
Description
Description
The BSS123 is an N-Channel Enhancement Mode MOSFET designed for applications requiring a maximum Drain-Source Voltage of 100 V and continuous Drain Current of 0.2 A. It features a low on-state resistance of 5.0 Ω at VGS = 10 V and is housed in a SOT-23 package, making it suitable for surface-mounted applications.
The BSS123 is an N-Channel Enhancement Mode MOSFET designed for applications requiring a maximum Drain-Source Voltage of 100 V and continuous Drain Current of 0.2 A. It features a low on-state resistance of 5.0 Ω at VGS = 10 V and is housed in a SOT-23 package, making it suitable for surface-mounted applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
BSS123 is also available from the following manufacturers
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