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A3I20X050GNR1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A3I20X050GNR1 is utilized in telecommunications, specifically in cellular base stations. Its wideband capabilities and integrated design make it ideal for applications requiring efficient RF amplification across the 1.8 GHz to 2.2 GHz frequency range, supporting multiple modulation formats.
Specification
Specification
AIRFAST RF LDMOS WIDEBAND INTEGR
AIRFAST RF LDMOS WIDEBAND INTEGR
Detailed specification
Detailed specification
RF Amplifier IC 1.8GHz ~ 2.2GHz OM-400G-8
RF Amplifier IC 1.8GHz ~ 2.2GHz OM-400G-8
Description
Description
The A3I20X050GNR1 is an RF Amplifier IC designed for wideband applications, operating from 1.8 GHz to 2.2 GHz. It features an integrated Doherty circuit with on-chip matching, supporting 20 to 32 V operation. Rated for 6.3 W average output power, it is suitable for various cellular base station modulation formats, ensuring high efficiency and performance.
The A3I20X050GNR1 is an RF Amplifier IC designed for wideband applications, operating from 1.8 GHz to 2.2 GHz. It features an integrated Doherty circuit with on-chip matching, supporting 20 to 32 V operation. Rated for 6.3 W average output power, it is suitable for various cellular base station modulation formats, ensuring high efficiency and performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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