A3G22H400-04SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET
RF MOSFET
Detailed specification
Detailed specification
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features a RDS(on) of 0.1 ohms and is designed with a thick film resistor. The device can tolerate a power of 2 watts and has a drum-shaped core. It is surface-mounted for easy integration into circuits.
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features a RDS(on) of 0.1 ohms and is designed with a thick film resistor. The device can tolerate a power of 2 watts and has a drum-shaped core. It is surface-mounted for easy integration into circuits.
Description
Description
The A3G22H400-04SR3 is a 79 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1800 to 2200 MHz, providing high efficiency and performance. The device features high terminal impedances for optimal broadband performance and can withstand high output VSWR conditions.
The A3G22H400-04SR3 is a 79 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1800 to 2200 MHz, providing high efficiency and performance. The device features high terminal impedances for optimal broadband performance and can withstand high output VSWR conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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