A2T21H100-25SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS
RF MOSFET LDMOS
Detailed specification
Detailed specification
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features a RDS(on) of 0.1 ohms and is designed with a thick film resistor. The device can tolerate a power of 2 watts and has a drum-shaped core. It is wire-wound and is classified as surface-mounted.
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features a RDS(on) of 0.1 ohms and is designed with a thick film resistor. The device can tolerate a power of 2 watts and has a drum-shaped core. It is wire-wound and is classified as surface-mounted.
Description
Description
The A2T21H100-25SR3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates in the frequency range of 2110 to 2170 MHz, delivering 18 W average output power with a drain efficiency of up to 52.1%. This device features advanced Doherty performance and is optimized for digital predistortion systems.
The A2T21H100-25SR3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates in the frequency range of 2110 to 2170 MHz, delivering 18 W average output power with a drain efficiency of up to 52.1%. This device features advanced Doherty performance and is optimized for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C