A2T21H100-25SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS
RF MOSFET LDMOS
Detailed specification
Detailed specification
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features a RDS(on) of 0.1 ohms and is designed with a thick film resistor. The device can tolerate a power of 2 watts and has a drum-shaped core. It is wire-wound and is classified as surface-mounted.
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features a RDS(on) of 0.1 ohms and is designed with a thick film resistor. The device can tolerate a power of 2 watts and has a drum-shaped core. It is wire-wound and is classified as surface-mounted.
Description
Description
The A2T21H100-25SR3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates in the frequency range of 2110 to 2170 MHz, delivering 18 W average output power with a drain efficiency of up to 52.1%. This device features advanced Doherty performance and is optimized for digital predistortion systems.
The A2T21H100-25SR3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates in the frequency range of 2110 to 2170 MHz, delivering 18 W average output power with a drain efficiency of up to 52.1%. This device features advanced Doherty performance and is optimized for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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