A2T14H450-23NR6
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 31V OM1230-42
RF MOSFET LDMOS 31V OM1230-42
Detailed specification
Detailed specification
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
Description
Description
The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1427 to 1517 MHz, with a typical output power of 93 W at VDD = 31 Vdc and IDQA = 1000 mA. This N-channel enhancement-mode LDMOS transistor features advanced performance for digital predistortion systems.
The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1427 to 1517 MHz, with a typical output power of 93 W at VDD = 31 Vdc and IDQA = 1000 mA. This N-channel enhancement-mode LDMOS transistor features advanced performance for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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