logo

A2T14H450-23NR6

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A2T14H450-23NR6 is utilized in cellular base station applications, specifically designed for RF power amplification in the frequency range of 1427 to 1517 MHz. Its high output power and efficiency make it suitable for modern communication systems, enhancing signal quality and coverage in telecommunications.
Specification
Specification
RF MOSFET LDMOS 31V OM1230-42
RF MOSFET LDMOS 31V OM1230-42
Detailed specification
Detailed specification
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
Description
Description
The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1427 to 1517 MHz, with a typical output power of 93 W at VDD = 31 Vdc and IDQA = 1000 mA. This N-channel enhancement-mode LDMOS transistor features advanced performance for digital predistortion systems.
The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1427 to 1517 MHz, with a typical output power of 93 W at VDD = 31 Vdc and IDQA = 1000 mA. This N-channel enhancement-mode LDMOS transistor features advanced performance for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Patrick or one of our other skilled sales representatives. They'll help you find the right service option.
Patrick Wiström
Upload BOM
Would you like to upload a BOM with stock status and delivery times for all components? Then you can feel free to request a quote.