A2T14H450-23NR6
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 31V OM1230-42
RF MOSFET LDMOS 31V OM1230-42
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
Beskrivning (eng)
Beskrivning (eng)
The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1427 to 1517 MHz, with a typical output power of 93 W at VDD = 31 Vdc and IDQA = 1000 mA. This N-channel enhancement-mode LDMOS transistor features advanced performance for digital predistortion systems.
The A2T14H450-23NR6 is a 93 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the frequency range of 1427 to 1517 MHz, with a typical output power of 93 W at VDD = 31 Vdc and IDQA = 1000 mA. This N-channel enhancement-mode LDMOS transistor features advanced performance for digital predistortion systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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