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6116LA120DB

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
6116LA120DB is suitable for military, commercial, and industrial applications, particularly in environments requiring high-speed static memory with low power consumption. Its features include battery backup operation, making it ideal for systems where data retention during power loss is critical. The device operates within an industrial temperature range of -40°C to +85°C, ensuring reliability in demanding conditions.
Specification
Specification
IC SRAM 16KBIT PARALLEL 24CDIP
IC SRAM 16KBIT PARALLEL 24CDIP
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP
SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP
Description
Description
The Renesas Electronics 6116LA120DB is a 16Kbit asynchronous SRAM organized as 2K x 8, featuring access times of 120 ns. It operates with a supply voltage of 5.0V ± 10% and supports low-power consumption with battery backup capability at 2V for data retention. The device is TTL-compatible and requires no refresh cycles, making it ideal for static applications.
The Renesas Electronics 6116LA120DB is a 16Kbit asynchronous SRAM organized as 2K x 8, featuring access times of 120 ns. It operates with a supply voltage of 5.0V ± 10% and supports low-power consumption with battery backup capability at 2V for data retention. The device is TTL-compatible and requires no refresh cycles, making it ideal for static applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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