4N26SR2M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6SMD
OPTOISO 4.17KV TRANS W/BASE 6SMD
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-SMD
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-SMD
Description
Description
The 4N26SR2M from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin surface-mounted package. This device is designed for applications requiring electrical isolation and signal transmission.
The 4N26SR2M from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin surface-mounted package. This device is designed for applications requiring electrical isolation and signal transmission.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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