2N7002HWX
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
2N7002HW/SOT323/SC-70
2N7002HW/SOT323/SC-70
Detailed specification
Detailed specification
N-Channel 60 V 310mA (Ta) 310mW (Ta) surface-mounted SOT-323
N-Channel 60 V 310mA (Ta) 310mW (Ta) surface-mounted SOT-323
Description
Description
The 2N7002HW is an N-channel enhancement mode Trench MOSFET in a compact SOT323 (SC-70) surface-mounted package. It features a maximum drain-source voltage (VDS) of 60 V, a continuous drain current (ID) of 310 mA, and a low on-state resistance (RDS(on)) of 1.6 Ω at VGS = 10 V. This device is ideal for high-speed switching applications.
The 2N7002HW is an N-channel enhancement mode Trench MOSFET in a compact SOT323 (SC-70) surface-mounted package. It features a maximum drain-source voltage (VDS) of 60 V, a continuous drain current (ID) of 310 mA, and a low on-state resistance (RDS(on)) of 1.6 Ω at VGS = 10 V. This device is ideal for high-speed switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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