2N7002HWX
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
2N7002HW/SOT323/SC-70
2N7002HW/SOT323/SC-70
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 310mA (Ta) 310mW (Ta) ytmonterad SOT-323
N-Kanal 60 V 310mA (Ta) 310mW (Ta) ytmonterad SOT-323
Beskrivning (eng)
Beskrivning (eng)
The 2N7002HW is an N-channel enhancement mode Trench MOSFET in a compact SOT323 (SC-70) surface-mounted package. It features a maximum drain-source voltage (VDS) of 60 V, a continuous drain current (ID) of 310 mA, and a low on-state resistance (RDS(on)) of 1.6 Ω at VGS = 10 V. This device is ideal for high-speed switching applications.
The 2N7002HW is an N-channel enhancement mode Trench MOSFET in a compact SOT323 (SC-70) surface-mounted package. It features a maximum drain-source voltage (VDS) of 60 V, a continuous drain current (ID) of 310 mA, and a low on-state resistance (RDS(on)) of 1.6 Ω at VGS = 10 V. This device is ideal for high-speed switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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