2N7002F,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 475MA TO236AB
MOSFET N-CH 60V 475MA TO236AB
Detailed specification
Detailed specification
N-Channel 60 V 475mA (Ta) 830mW (Ta) surface-mounted TO-236AB
N-Channel 60 V 475mA (Ta) 830mW (Ta) surface-mounted TO-236AB
Description
Description
The 2N7002F,215 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 475mA. It is housed in a TO-236AB surface-mounted package and utilizes TrenchMOS technology for fast switching applications. The on-state resistance (RDS(on)) is ≤ 2Ω, with a total power dissipation of 830mW.
The 2N7002F,215 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 475mA. It is housed in a TO-236AB surface-mounted package and utilizes TrenchMOS technology for fast switching applications. The on-state resistance (RDS(on)) is ≤ 2Ω, with a total power dissipation of 830mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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