2N7002F,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 475MA TO236AB
MOSFET N-CH 60V 475MA TO236AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 475mA (Ta) 830mW (Ta) ytmonterad TO-236AB
N-Kanal 60 V 475mA (Ta) 830mW (Ta) ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The 2N7002F,215 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 475mA. It is housed in a TO-236AB surface-mounted package and utilizes TrenchMOS technology for fast switching applications. The on-state resistance (RDS(on)) is ≤ 2Ω, with a total power dissipation of 830mW.
The 2N7002F,215 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 475mA. It is housed in a TO-236AB surface-mounted package and utilizes TrenchMOS technology for fast switching applications. The on-state resistance (RDS(on)) is ≤ 2Ω, with a total power dissipation of 830mW.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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