2N7002BKVL
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 350MA TO236AB
MOSFET N-CH 60V 350MA TO236AB
Detailed specification
Detailed specification
N-Channel 60 V 350mA (Ta) 370mW (Ta) surface-mounted TO-236AB
N-Channel 60 V 350mA (Ta) 370mW (Ta) surface-mounted TO-236AB
Description
Description
The 2N7002BKVL is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 350 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching and logic-level compatibility. The device also offers ESD protection up to 2 kV and is AEC-Q101 qualified, making it suitable for various applications.
The 2N7002BKVL is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 350 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching and logic-level compatibility. The device also offers ESD protection up to 2 kV and is AEC-Q101 qualified, making it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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