2N7002BKVL
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 350MA TO236AB
MOSFET N-CH 60V 350MA TO236AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 350mA (Ta) 370mW (Ta) ytmonterad TO-236AB
N-Kanal 60 V 350mA (Ta) 370mW (Ta) ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The 2N7002BKVL is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 350 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching and logic-level compatibility. The device also offers ESD protection up to 2 kV and is AEC-Q101 qualified, making it suitable for various applications.
The 2N7002BKVL is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 350 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching and logic-level compatibility. The device also offers ESD protection up to 2 kV and is AEC-Q101 qualified, making it suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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