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2N7002

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2N7002 is designed for use in portable devices and DC/DC converters, providing high-density cell design for low on-state resistance and reliable performance in small signal switching applications. Its rugged construction and high saturation current capability make it ideal for various electronic applications.
Specification
Specification
S0T-23 MOSFETS ROHS
S0T-23 MOSFETS ROHS
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Ta) 225mW (Ta) surface-mounted SOT-23
N-Channel 60 V 115mA (Ta) 225mW (Ta) surface-mounted SOT-23
Description
Description
The 2N7002 is an N-Channel MOSFET in a SOT-23 package, featuring a maximum Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 115 mA. It offers low RDS(on) values of 5 Ω at VGS=10 V and 7 Ω at VGS=5 V, making it suitable for efficient switching applications in portable devices and DC/DC converters.
The 2N7002 is an N-Channel MOSFET in a SOT-23 package, featuring a maximum Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 115 mA. It offers low RDS(on) values of 5 Ω at VGS=10 V and 7 Ω at VGS=5 V, making it suitable for efficient switching applications in portable devices and DC/DC converters.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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