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2N7002

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
The 2N7002 is designed for switching applications in various domains, including industrial and consumer electronics. Its low on-state resistance and robust performance make it ideal for use in power management circuits, signal switching, and other applications requiring efficient MOSFET operation.
Specification
Specification
MOSFET N-CH 60V 200MA SOT23-3
MOSFET N-CH 60V 200MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 200mA (Tc) 350mW (Tc) surface-mounted SOT-23-3
N-Channel 60 V 200mA (Tc) 350mW (Tc) surface-mounted SOT-23-3
Description
Description
The 2N7002 is an N-channel MOSFET with a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 200mA. It features a low on-state resistance (RDS(on)) of 1.8 Ω at VGS = 10V, making it suitable for efficient switching applications. Packaged in a SOT-23-3 surface mount configuration, it offers high packing density and rugged avalanche characteristics.
The 2N7002 is an N-channel MOSFET with a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 200mA. It features a low on-state resistance (RDS(on)) of 1.8 Ω at VGS = 10V, making it suitable for efficient switching applications. Packaged in a SOT-23-3 surface mount configuration, it offers high packing density and rugged avalanche characteristics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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