2N2907
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 40V 0.6A TO18
TRANS PNP 40V 0.6A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Through Hole TO-18
Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Through Hole TO-18
Description
Description
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a collector current rating of 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, providing robust mechanical protection and thermal performance. With a power dissipation capability of 400mW, the 2N2907 is ideal for low to medium power applications, ensuring reliable operation in diverse environments.
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a collector current rating of 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, providing robust mechanical protection and thermal performance. With a power dissipation capability of 400mW, the 2N2907 is ideal for low to medium power applications, ensuring reliable operation in diverse environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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