2N2907
Manufacturer
MICROCHIP TECHNOLOGY
Specification
Specification
SMALL-SIGNAL BJT
SMALL-SIGNAL BJT
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18 (TO-206AA)
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18 (TO-206AA)
Description
Description
The 2N2907 is a small-signal PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 600 mA, and a power dissipation capability of 500 mW. Packaged in a TO-18 (TO-206AA) through-hole configuration, this transistor is suitable for use in low-power circuits where compact size and reliable performance are essential. Its robust design ensures stable operation in various electronic applications.
The 2N2907 is a small-signal PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 600 mA, and a power dissipation capability of 500 mW. Packaged in a TO-18 (TO-206AA) through-hole configuration, this transistor is suitable for use in low-power circuits where compact size and reliable performance are essential. Its robust design ensures stable operation in various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
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