2N2907
Manufacturer
MOTOROLA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 40V 0.6A TO18
TRANS PNP 40V 0.6A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18
Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18
Description
Description
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a transition frequency of 200MHz, this transistor is suitable for high-frequency applications. The device is housed in a TO-18 package, making it ideal for through-hole mounting in various electronic circuits. Its power dissipation capability is rated at 1.8W, ensuring reliable performance in demanding environments.
The 2N2907 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a transition frequency of 200MHz, this transistor is suitable for high-frequency applications. The device is housed in a TO-18 package, making it ideal for through-hole mounting in various electronic circuits. Its power dissipation capability is rated at 1.8W, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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