2N2222A
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
BJT TO92 40V NPN 0.625W 150C
BJT TO92 40V NPN 0.625W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 500 mW Through Hole TO-18
Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 500 mW Through Hole TO-18
Description
Description
The 2N2222A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V, a collector current of 600mA, and a power dissipation capability of 500mW. With a transition frequency of 300MHz, this transistor is suitable for high-speed applications. Packaged in a TO-92 form factor, it operates efficiently at temperatures up to 150°C, making it ideal for various electronic circuits requiring reliable performance.
The 2N2222A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V, a collector current of 600mA, and a power dissipation capability of 500mW. With a transition frequency of 300MHz, this transistor is suitable for high-speed applications. Packaged in a TO-92 form factor, it operates efficiently at temperatures up to 150°C, making it ideal for various electronic circuits requiring reliable performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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