2N2222A
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT TO-92 40V 600MA
BJT TO-92 40V 600MA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Through Hole TO-92
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Through Hole TO-92
Description
Description
The 2N2222A is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 package. It features a maximum collector-emitter voltage (VCEO) of 40 V, a collector current (IC) rating of 600 mA, and a power dissipation (Ptot) of 625 mW. With a gain-bandwidth product of 250 MHz and a maximum junction temperature of 150°C, it is suitable for signal processing, switching, and amplification applications.
The 2N2222A is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92 package. It features a maximum collector-emitter voltage (VCEO) of 40 V, a collector current (IC) rating of 600 mA, and a power dissipation (Ptot) of 625 mW. With a gain-bandwidth product of 250 MHz and a maximum junction temperature of 150°C, it is suitable for signal processing, switching, and amplification applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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