2N2222A
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 40V 0.8A TO18
TRANS NPN 40V 0.8A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 800 mA 500 mW Through Hole TO-18
Bipolar (BJT) Transistor NPN 40 V 800 mA 500 mW Through Hole TO-18
Description
Description
The 2N2222A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a collector current rating of 800mA, making it suitable for a variety of electronic circuits. The device is housed in a TO-18 package, ensuring reliable through-hole mounting. With a power dissipation capability of 500mW, the 2N2222A is ideal for low to medium power applications, providing excellent thermal stability and performance in diverse environments.
The 2N2222A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a collector current rating of 800mA, making it suitable for a variety of electronic circuits. The device is housed in a TO-18 package, ensuring reliable through-hole mounting. With a power dissipation capability of 500mW, the 2N2222A is ideal for low to medium power applications, providing excellent thermal stability and performance in diverse environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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